{ { { ? { { { ? absolute maximum ratings ( * drain current limited by junction temperature) symbol parameter value units v dss drain to source voltage 600 v i d continuous drain current(@t c = 25 c) 7.0* a continuous drain current(@t c = 100 c) 4.4* a i dm drain current pulsed (note 1) 28* a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 420 mj e ar repetitive avalanche energy (note 1) 14.7 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation(@t c = 25 c) 48 w derating factor above 25 c 0.38 w/c t stg, t j operating junction temperature & storage temperature - 55 ~ 150 c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 c thermal characteristics symbol parameter value units min. typ. max. r jc thermal resistance, junction-to-case - - 2.6 c/w r ja thermal resistance, junction-to-ambient - - 62.5 c/w et- 7n60 features r ds(on) (max 1.2 ? )@v gs =10v gate charge (typical 28nc) improved dv/dt capability, high ruggedness 100% avalanche tested maximum junction temperature range (150c) general description this power mosfet is manufa ctured advanced planar stripe, dmos technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. these devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballas ts based on half bridge topology. n-channel mosfet symbol 2. drain 3. source 1. gate to-220f 1 2 3 beijing estek electronics co.,ltd 1
electrical characteristics ( t c = 25 c unless otherwise noted ) symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250ua 600 - - v bv dss / t j breakdown voltage temperature coefficient i d = 250ua, referenced to 25 c - 0.6 - v/c i dss drain-source leakage current v ds = 600v, v gs = 0v --10ua v ds = 480v, t c = 125 c - - 100 ua i gss gate-source leakage, forward v gs = 30v, v ds = 0v - - 100 na gate-source leakage, reverse v gs = -30v, v ds = 0v - - -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250ua 2.0 - 4.0 v r ds(on) static drain-source on-state resis- tance v gs =10 v, i d = 3.5a -0.851.2 ? dynamic characteristics c iss input capacitance v gs =0 v, v ds =25v, f = 1mhz - 1100 1500 pf c oss output capacitance - 110 150 c rss reverse transfer capacitance - 12 16 dynamic characteristics t d(on) turn-on delay time v dd =300v, i d =7.0a, r g =25 ? (note 4, 5) - 15 40 ns t r rise time - 30 70 t d(off) turn-off delay time - 110 230 t f fall time - 40 90 q g total gate charge v ds =480v, v gs =10v, i d =7.0a (note 4, 5) - 28 37 nc q gs gate-source charge - 5- q gd gate-drain charge(miller charge) - 11 - source-drain diode ratings and characteristics symbol parameter test conditions min. typ. max. unit. i s continuous source current integral reverse p-n junction diode in the mosfet --7.0 a i sm pulsed source current - - 28 v sd diode forward voltage i s =7.0a, v gs =0v - - 1.4 v t rr reverse recovery time i s =7.0a, v gs =0v, di f /dt=100a/us - 365 - ns q rr reverse recovery charge - 3.4 - uc notes 1. repeativity rating : pulse widt h limited by junction temperature 2. l = 15.7mh, i as =7a, v dd = 50v, r g = 25 ? , starting t j = 25c 3. i sd 7a, di/dt 200a/us, v dd bv dss , starting t j = 25c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. beijing estek electronics co.,ltd 2 et- 7n60
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